[E-4-3] Peak Position Control of Coulomb Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature

Y. Tanahashi^1,2、R. Suzuki¹、T. Saraya¹、T. Hiramoto¹ (1.Univ. of Tokyo、2.Chuo Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.E-4-3