[J-1-3] Effect of Gate Insulator Material on Dynamic On-Resistance in GaN MIS-HEMT on 6-inch Si

S. Akiyama¹, Y. Watanabe¹, T. Wakabayashi¹, K. Nukui¹, Y. Kotani¹, T. Ogino¹, T. Hosoda¹, M. Kanamura², K. Joshin², T. Kikkawa² (1.Fujitsu Semiconductor Ltd., 2.Fujitsu Labs. (Japan))

https://doi.org/10.7567/SSDM.2013.J-1-3