[J-2-3] Improved High-Temperture Characteristics of AlGaN/GaN MISHEMTs with ZrO₂/Al₂O₃ Dual Dielectric Films

M. Hatano¹, Y. Taniguchi¹, H. Tokuda¹, M. Kuzuhara¹ (1.Univ. of Fukui (Japan))

https://doi.org/10.7567/SSDM.2013.J-2-3