[J-2-4] Impact of PdO Gate Interlayer on the DC Performance of GaN/AlGaN High Electron Mobility Transistor

F.C Chu¹, A. Das¹, R.M Lin¹, H.W Chuang², K.J Chang², Y.T Gau² (1.Chang Gung Univ., 2.Chung Shan Inst. of Sci. and Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2013.J-2-4