[J-2-4] Impact of PdO Gate Interlayer on the DC Performance of GaN/AlGaN High Electron Mobility Transistor

F.C Chu¹、A. Das¹、R.M Lin¹、H.W Chuang²、K.J Chang²、Y.T Gau² (1.Chang Gung Univ.、2.Chung Shan Inst. of Sci. and Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2013.J-2-4