The Japan Society of Applied Physics

[J-2-4] Impact of PdO Gate Interlayer on the DC Performance of GaN/AlGaN High Electron Mobility Transistor

F.C Chu1, A. Das1, R.M Lin1, H.W Chuang2, K.J Chang2, Y.T Gau2 (1.Chang Gung Univ., 2.Chung Shan Inst. of Sci. and Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2013.J-2-4