[J-2-6] A Low Turn-On Voltage and High Breakdown Voltage AlGaN/GaN Dual Metal Schottky Barrier Diode

T.Y. Yang^1,2, T.F. Chang¹, T.Y. Huang², C.W. Chiu², H.D. Su², K.C. Chang², C.F. Huang¹ (1.National Tsing Hua Univ., 2.Richtek Tech. Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2013.J-2-6