[J-2-6] A Low Turn-On Voltage and High Breakdown Voltage AlGaN/GaN Dual Metal Schottky Barrier Diode
T.Y. Yang1,2、T.F. Chang1、T.Y. Huang2、C.W. Chiu2、H.D. Su2、K.C. Chang2、C.F. Huang1
(1.National Tsing Hua Univ.、2.Richtek Tech. Corp. (Taiwan))
https://doi.org/10.7567/SSDM.2013.J-2-6