[J-3-1] Scaling to 100nm Channel Length of Crystalline In-Ga-Zn-Oxide Thin Film Transistors with Extremely Low Off-State Current

Y. Kobayashi¹, S. Matsuda¹, D. Matsubayashi¹, H. Suzawa¹, M. Sakakura¹, K. Hanaoka¹, Y. Okazaki¹, T. Yamamoto¹, S. Hondo¹, T. Hamada¹, S. Sasagawa¹, M. Nagai¹, Y. Hata¹, T. Maruyama¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2013.J-3-1