Gate Oxide Thickness Dependence of Intrinsic Gain and Flicker Noise in InGaZnO Thin Film Transistors

T. Morooka; K. Fukase; S. Nakano; S. Toriyama; H. Momose; T. Ohguro

doi:https://doi.org/10.7567/SSDM.2013.J-3-2

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[J-3-2] Gate Oxide Thickness Dependence of Intrinsic Gain and Flicker Noise in InGaZnO Thin Film Transistors

T. Morooka¹, K. Fukase¹, S. Nakano², S. Toriyama², H. Momose¹, T. Ohguro¹ (1.Toshiba Corp. Semiconductor & Strorage Products Company, 2.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.J-3-2

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