The Japan Society of Applied Physics

[J-4-2] Effects of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HFETs

M.K. Eo1, H.S. Choi1, S.Y. Jang2, W.S. Kim2, J.H. Shin2, T.H. Jang2, H.I. Kwon1 (1.Univ. of Chung-Ang, 2.System IC R&D Lab., LG Electronics (Korea))

https://doi.org/10.7567/SSDM.2013.J-4-2