The Japan Society of Applied Physics

[J-4-2] Effects of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HFETs

M.K. Eo1、H.S. Choi1、S.Y. Jang2、W.S. Kim2、J.H. Shin2、T.H. Jang2、H.I. Kwon1 (1.Univ. of Chung-Ang、2.System IC R&D Lab., LG Electronics (Korea))

https://doi.org/10.7567/SSDM.2013.J-4-2