[J-4-4] Improved Current Collapse Phenomenon in AlGaN/GaN-on-Si HFETs Using Sacrificial GaOx Process
J.G. Lee1, S.W. Han1, B.R. Park1, K.S Seo2, H. Kim1, H.Y Cha1
(1.Hongik Univ., 2.Seoul National Univ. (Korea))
https://doi.org/10.7567/SSDM.2013.J-4-4
