[J-4-4] Improved Current Collapse Phenomenon in AlGaN/GaN-on-Si HFETs Using Sacrificial GaO_x Process

J.G. Lee¹、S.W. Han¹、B.R. Park¹、K.S Seo²、H. Kim¹、H.Y Cha¹ (1.Hongik Univ.、2.Seoul National Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.J-4-4