[J-5-5L] Evaluation of Fully Implanted Lightly Doped Drain (LDD) GaN-MISFET for Low Voltage and High Frequency Application

I. Kume¹、A. Tanabe¹、H. Takeda¹、S. Saito¹、N. Furutake¹、T. Hase¹ (1.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.J-5-5L