[J-6-3] Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT

Y. Yamaguchi¹、K. Hayashi¹、T. Oishi¹、H. Otsuka¹、K. Yamanaka¹、Y. Miyamoto² (1.Mitsubishi Electric Corp.、2.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2013.J-6-3