[J-6-3] Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT

Y. Yamaguchi¹, K. Hayashi¹, T. Oishi¹, H. Otsuka¹, K. Yamanaka¹, Y. Miyamoto² (1.Mitsubishi Electric Corp., 2.Tokyo Tech (Japan))

https://doi.org/10.7567/SSDM.2013.J-6-3