[J-6-5] GaN/AlN Resonant Tunneling Diode with High Peak-to-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy

M. Nagase¹、T. Takahashi¹、M. Shimizu¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.J-6-5