[J-6-6] Temperature-dependent Characteristics of AlGaN-GaN-on-Si Heterojunction Field Effect Transistors (HFETs) under reverse gate bias stress

D.M. Keum¹, S.H. Choi¹, Y.J. Kang¹, J.G. Lee¹, H.Y. Cha¹, H.T. Kim¹ (1.Univ. of Hongik (Korea))

https://doi.org/10.7567/SSDM.2013.J-6-6