[J-6-6] Temperature-dependent Characteristics of AlGaN-GaN-on-Si Heterojunction Field Effect Transistors (HFETs) under reverse gate bias stress

D.M. Keum¹、S.H. Choi¹、Y.J. Kang¹、J.G. Lee¹、H.Y. Cha¹、H.T. Kim¹ (1.Univ. of Hongik (Korea))

https://doi.org/10.7567/SSDM.2013.J-6-6