P2S5/(NH4)2Sx-Based Sulfur Mono-Layer Doping Technique to form Sub-10 nm Ultra-Shallow Junctions for Advanced III-V Logic Devices

S. Subramanian; E.Y.J. Kong; D.S. Li; S. Wicaksono; S.F. Yoon; Y.C. Yeo

doi:https://doi.org/10.7567/SSDM.2013.J-8-2

[J-8-2] P₂S₅/(NH₄)₂S_x-Based Sulfur Mono-Layer Doping Technique to form Sub-10 nm Ultra-Shallow Junctions for Advanced III-V Logic Devices

S. Subramanian^1,2、E.Y.J. Kong¹、D.S. Li³、S. Wicaksono³、S.F. Yoon³、Y.C. Yeo^1,2 (1.National Univ. of Singapore、2.NUS Graduate School for Integrative Sci. and Eng.、3.Nanyang Technological Univ. (Singapore))

https://doi.org/10.7567/SSDM.2013.J-8-2

2013 International Conference on Solid State Devices and Materials

[J-8-2] P2S5/(NH4)2Sx-Based Sulfur Mono-Layer Doping Technique to form Sub-10 nm Ultra-Shallow Junctions for Advanced III-V Logic Devices

[J-8-2] P₂S₅/(NH₄)₂S_x-Based Sulfur Mono-Layer Doping Technique to form Sub-10 nm Ultra-Shallow Junctions for Advanced III-V Logic Devices