Research and Development on Ga<sub>2</sub>O<sub>3</sub> Power Devices

M. Higashiwaki; K. Sasaki; M.H. Wong; T. Kamimura; D. Krishnamurthy; A. Kuramata; T. Masui; S. Yamakoshi

doi:https://doi.org/10.7567/SSDM.2013.M-3-1

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[M-3-1] Research and Development on Ga₂O₃ Power Devices

M. Higashiwaki¹、K. Sasaki^2,1、M.H. Wong¹、T. Kamimura¹、D. Krishnamurthy¹、A. Kuramata²、T. Masui³、S. Yamakoshi² (1.National Inst. of Info. and Communications Tech.、2.Tamura Corp.、3.Koha Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2013.M-3-1

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2013 International Conference on Solid State Devices and Materials

[M-3-1] Research and Development on Ga2O3 Power Devices

[M-3-1] Research and Development on Ga₂O₃ Power Devices