[M-3-3] Gate Oxide Reliability on Large-Area Surface Defects in 4H-SiC Epitaxial Wafers

O. Ishiyama¹、K. Yamada¹、H. Sako¹、K. Tamura¹、M. Kitabatake¹、J. Senzaki^1,2、H. Matsuhata^1,2 (1.R&D Partnership for Future Power Electronics Tech.、2.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.M-3-3