Gate Oxide Reliability on Large-Area Surface Defects in 4H-SiC Epitaxial Wafers

O. Ishiyama; K. Yamada; H. Sako; K. Tamura; M. Kitabatake; J. Senzaki; H. Matsuhata

doi:https://doi.org/10.7567/SSDM.2013.M-3-3

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[M-3-3] Gate Oxide Reliability on Large-Area Surface Defects in 4H-SiC Epitaxial Wafers

O. Ishiyama¹, K. Yamada¹, H. Sako¹, K. Tamura¹, M. Kitabatake¹, J. Senzaki^1,2, H. Matsuhata^1,2 (1.R&D Partnership for Future Power Electronics Tech., 2.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.M-3-3

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