[M-4-4] Effects of interface electric field on the magnetresitance in spin transistors

T. Tanamoto¹、M. Ishikawa¹、T. Inokuchi¹、H. Sugiyama¹、Y. Saito¹ (1.Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.M-4-4