Optimization of fabrication conditions of HfO2/SiO2/Si(100) and Y2O3/SiO2/Si(100) structures

Y. Toyoshima; S. Taniwaki; Y. Hotta; H. Yoshida; K. Arafune; A. Ogura; S. Sato

doi:https://doi.org/10.7567/SSDM.2013.P-1-4

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[P-1-4] Optimization of fabrication conditions of HfO₂/SiO₂/Si(100) and Y2O₃/SiO₂/Si(100) structures

Y. Toyoshima¹、S. Taniwaki¹、Y. Hotta^1,3、H. Yoshida^1,3、K. Arafune^1,3、A. Ogura^2,3、S. Sato^1,3 (1.Univ. of Hyogo、2.Univ. of Meiji、3.JST-CREST (Japan))

https://doi.org/10.7567/SSDM.2013.P-1-4

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2013 International Conference on Solid State Devices and Materials

[P-1-4] Optimization of fabrication conditions of HfO2/SiO2/Si(100) and Y2O3/SiO2/Si(100) structures

[P-1-4] Optimization of fabrication conditions of HfO₂/SiO₂/Si(100) and Y2O₃/SiO₂/Si(100) structures