[P-2-3] Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices

R.R. Lieten^1,2, T. Maeda³, W. Jevasuwan³, H. Hattori³, N. Uchida³, S. Miura⁴, M. Tanaka⁴, J.W. Seo¹, J.P. Locquet¹ (1.KU Leuven, 2.IMEC, 3.National Inst. for Advanced Indus. Sci. and Tech., 4.Yokohama National Univ. (Belgium))

https://doi.org/10.7567/SSDM.2013.P-2-3