[P-2-4] Low-Temperature (~300°C) Epitaxial-Growth of SiGe(Sn) on Si-Platform by Liquid-Solid Coexisting Annealing

H. Chikita¹、R. Matsumura¹、Y. Tojo¹、Y. Kinoshita¹、T. Sadoh¹、M. Miyao¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.P-2-4