[P-2-4] Low-Temperature (~300°C) Epitaxial-Growth of SiGe(Sn) on Si-Platform by Liquid-Solid Coexisting Annealing

H. Chikita¹, R. Matsumura¹, Y. Tojo¹, Y. Kinoshita¹, T. Sadoh¹, M. Miyao¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.P-2-4