[P-5-2] Growth of InGaAs single-junction solar cell on GaAs/Ge/Si heterostructure using graded-temperature arsenic technique

H.W. Yu¹, Y. Yamamoto³, B. Tillack^3,4, H.Q. Nguyen¹, E.Y. Chang^1,2 (1.National Chiao Tung Univ., 2.National Chiao Tung Univ., 3.Innovations for high performance microelectronics, 4.Technische Univ. Berlin (Taiwan))

https://doi.org/10.7567/SSDM.2013.P-5-2