Growth of InGaAs single-junction solar cell on GaAs/Ge/Si heterostructure using graded-temperature arsenic technique

H.W. Yu; Y. Yamamoto; B. Tillack; H.Q. Nguyen; E.Y. Chang

doi:https://doi.org/10.7567/SSDM.2013.P-5-2

[P-5-2] Growth of InGaAs single-junction solar cell on GaAs/Ge/Si heterostructure using graded-temperature arsenic technique

H.W. Yu¹、Y. Yamamoto³、B. Tillack^3,4、H.Q. Nguyen¹、E.Y. Chang^1,2 (1.National Chiao Tung Univ.、2.National Chiao Tung Univ.、3.Innovations for high performance microelectronics、4.Technische Univ. Berlin (Taiwan))

https://doi.org/10.7567/SSDM.2013.P-5-2

2013 International Conference on Solid State Devices and Materials

[P-5-2] Growth of InGaAs single-junction solar cell on GaAs/Ge/Si heterostructure using graded-temperature arsenic technique