[PS-1-10] Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices

L. Han^1,2、S.K. Wang¹、B.Q. Xue¹、X. Zhang²、W.R. Wu³、H.D. Chang¹、W. Zhao¹、B. Sun¹、Y. Zhao³、H.G. Liu¹、Y.P. Cui² (1.Inst. of Microelectronics、2.Southeast Univ.、3.Nanjing Univ. (China))

https://doi.org/10.7567/SSDM.2013.PS-1-10