[PS-1-10] Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices

L. Han^1,2, S.K. Wang¹, B.Q. Xue¹, X. Zhang², W.R. Wu³, H.D. Chang¹, W. Zhao¹, B. Sun¹, Y. Zhao³, H.G. Liu¹, Y.P. Cui² (1.Inst. of Microelectronics, 2.Southeast Univ., 3.Nanjing Univ. (China))

https://doi.org/10.7567/SSDM.2013.PS-1-10