Investigation of Via Degradation Behavior under Thermal Cycling Stress on Power Device

M. Zhang; Y. Yoshihisa; K. Furuya; Y. Imai; K. Hatasako; S. Maegawa

doi:https://doi.org/10.7567/SSDM.2013.PS-14-1

2013 International Conference on Solid State Devices and Materials

Sep 24, 2013 - Sep 27, 2013
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[PS-14-1] Investigation of Via Degradation Behavior under Thermal Cycling Stress on Power Device

M. Zhang¹, Y. Yoshihisa¹, K. Furuya², Y. Imai¹, K. Hatasako¹, S. Maegawa¹ (1.Renesas Electronics Corp., 2.Renesas Semiconductor Engineering Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-14-1

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