Negative differential conductivity in Gate-All-Around Si Nanowire FETs and its impact on Circuit Performance

K. Nayak; M. Bajaj; A. Konar; P.J. Oldiges; H. Iwai; K.V.R.M. Murali; V.R. Rao

doi:https://doi.org/10.7567/SSDM.2013.PS-3-18

[PS-3-18] Negative differential conductivity in Gate-All-Around Si Nanowire FETs and its impact on Circuit Performance

K. Nayak¹、M. Bajaj²、A. Konar²、P.J. Oldiges³、H. Iwai⁴、K.V.R.M. Murali²、V.R. Rao¹ (1.IIT Bombay、2.IBM Semiconductor Research and Development Center, India、3.IBM Semiconductor Research and Development Center, USA、4.Tokyo Inst. of Tech. (India))

https://doi.org/10.7567/SSDM.2013.PS-3-18

2013 International Conference on Solid State Devices and Materials

[PS-3-18] Negative differential conductivity in Gate-All-Around Si Nanowire FETs and its impact on Circuit Performance