[PS-3-20] Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process

M. Oda¹、T. Irisawa¹、E. Mieda¹、Y. Kurashima²、H. Takagi²、W. Jevasuwan¹、T. Maeda¹、O. Ichikawa³、T. Ishihara³、T. Osada³、Y. Miyamoto⁴、T. Tezuka¹ (1.GNC, AIST、2.AIST、3.Sumitomo Chemical Co. Ltd.、4.Tokyo Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-3-20