[PS-3-20] Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process

M. Oda¹, T. Irisawa¹, E. Mieda¹, Y. Kurashima², H. Takagi², W. Jevasuwan¹, T. Maeda¹, O. Ichikawa³, T. Ishihara³, T. Osada³, Y. Miyamoto⁴, T. Tezuka¹ (1.GNC, AIST, 2.AIST, 3.Sumitomo Chemical Co. Ltd., 4.Tokyo Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-3-20