The Japan Society of Applied Physics

[PS-3-5] Study of Trap Properties of High-k/Metal Gate pMOSFETs with Aluminum Ion Implantation by Random Telegraph Noise and 1/f Noise Measurements

T.H. Kao1、S.L. Wu2、K.S. Tsai2、Y.K. Fang1、B.C. Wang1、C.M. Lai3、C.W. Hsu3、Y.W. Chen3、O.B. Cheng3、S.J. Chang1 (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-3-5