[PS-3-5] Study of Trap Properties of High-k/Metal Gate pMOSFETs with Aluminum Ion Implantation by Random Telegraph Noise and 1/f Noise Measurements

T.H. Kao¹、S.L. Wu²、K.S. Tsai²、Y.K. Fang¹、B.C. Wang¹、C.M. Lai³、C.W. Hsu³、Y.W. Chen³、O.B. Cheng³、S.J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-3-5