[PS-3-5] Study of Trap Properties of High-k/Metal Gate pMOSFETs with Aluminum Ion Implantation by Random Telegraph Noise and 1/f Noise Measurements

T.H. Kao¹, S.L. Wu², K.S. Tsai², Y.K. Fang¹, B.C. Wang¹, C.M. Lai³, C.W. Hsu³, Y.W. Chen³, O.B. Cheng³, S.J. Chang¹ (1.National Cheng Kung Univ., 2.Cheng Shiu Univ., 3.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-3-5