A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer

M.S. Hadi; S. Kano; C. Dou; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; K. Natori; H. Wakabayashi; K. Tsutsui; H. Iwai; N. Sugii

doi:https://doi.org/10.7567/SSDM.2013.PS-4-2

[PS-4-2] A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer

M.S. Hadi¹、S. Kano¹、C. Dou¹、K. Kakushima¹、P. Ahmet¹、Y. Kataoka¹、A. Nishiyama¹、K. Natori¹、H. Wakabayashi¹、K. Tsutsui¹、H. Iwai¹、N. Sugii¹ (1.Tokyo Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-4-2

2013 International Conference on Solid State Devices and Materials

[PS-4-2] A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer