The Japan Society of Applied Physics

[PS-4-2] A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer

M.S. Hadi1, S. Kano1, C. Dou1, K. Kakushima1, P. Ahmet1, Y. Kataoka1, A. Nishiyama1, K. Natori1, H. Wakabayashi1, K. Tsutsui1, H. Iwai1, N. Sugii1 (1.Tokyo Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-4-2