A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer

M.S. Hadi; S. Kano; C. Dou; K. Kakushima; P. Ahmet; Y. Kataoka; A. Nishiyama; K. Natori; H. Wakabayashi; K. Tsutsui; H. Iwai; N. Sugii

doi:https://doi.org/10.7567/SSDM.2013.PS-4-2

[PS-4-2] A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer

M.S. Hadi¹, S. Kano¹, C. Dou¹, K. Kakushima¹, P. Ahmet¹, Y. Kataoka¹, A. Nishiyama¹, K. Natori¹, H. Wakabayashi¹, K. Tsutsui¹, H. Iwai¹, N. Sugii¹ (1.Tokyo Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-4-2

2013 International Conference on Solid State Devices and Materials

[PS-4-2] A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer