[PS-4-5] Effect with Nano Dot Type Storage Layer Structure on Channel Region in 20nm Planar NAND Flash Memory Cell

T. Sasaki^1,2, M. Muraguchi^1,2, M.S. Seo³, S.K. Park³, T. Endoh^1,2 (1.Tohoku Univ., 2.JST-CREST, 3.SK hynix Inc. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-4-5