[PS-4-5] Effect with Nano Dot Type Storage Layer Structure on Channel Region in 20nm Planar NAND Flash Memory Cell

T. Sasaki^1,2、M. Muraguchi^1,2、M.S. Seo³、S.K. Park³、T. Endoh^1,2 (1.Tohoku Univ.、2.JST-CREST、3.SK hynix Inc. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-4-5