Extraction of Trapped Charge Profile in Space and Energy in P-Channel SONOS Memory Device

Y.Y. Chiu; B.J. Yang; F.H. Li; R.W. Chang; S.F. Ng; W.T. Sun; C.J. Hsu; C.W. Kuo; C.Y. Lo; R. Shirota

doi:https://doi.org/10.7567/SSDM.2013.PS-4-6L

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[PS-4-6L] Extraction of Trapped Charge Profile in Space and Energy in P-Channel SONOS Memory Device

Y.Y. Chiu¹、B.J. Yang¹、F.H. Li¹、R.W. Chang¹、S.F. Ng¹、W.T. Sun²、C.J. Hsu²、C.W. Kuo²、C.Y. Lo²、R. Shirota¹ (1.National Chiao Tung Univ.、2.eMemory Tech. Inc. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-4-6L

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