Microwave Performance of In<sub>0.25</sub>Ga<sub>0.75</sub>As MOSFET with an InGaP interfacial layer

H.D. Chang; G.M Liu; B. Sun; H.G Liu; X.L Zhou; J.Q Pan

doi:https://doi.org/10.7567/SSDM.2013.PS-6-16

[PS-6-16] Microwave Performance of In_0.25Ga_0.75As MOSFET with an InGaP interfacial layer

H.D. Chang¹, G.M Liu¹, B. Sun¹, H.G Liu¹, X.L Zhou², J.Q Pan² (1.Institute of Microelectronics Chinese Academy of Sciences, 2.Institute of Semiconductor Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2013.PS-6-16

2013 International Conference on Solid State Devices and Materials

[PS-6-16] Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer

[PS-6-16] Microwave Performance of In_0.25Ga_0.75As MOSFET with an InGaP interfacial layer