On the electrical characteristics of the atomic layer deposition Al2O3/In0.53Ga0.47As MOSCAPs with various annealing processes

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

Q.H Luc¹、E.Y Chang¹、H.D Trinh¹、H.Q Nguyen¹、B.T Tran¹、Y.C Lin¹、H.B Do¹ (1.Univ. of Chiao Tung (Taiwan))