[PS-6-18] On the electrical characteristics of the atomic layer deposition Al2O3/In0.53Ga0.47As MOSCAPs with various annealing processes
Q.H Luc1, E.Y Chang1, H.D Trinh1, H.Q Nguyen1, B.T Tran1, Y.C Lin1, H.B Do1
(1.Univ. of Chiao Tung (Taiwan))
https://doi.org/10.7567/SSDM.2013.PS-6-18
