The Japan Society of Applied Physics

[PS-6-19] Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application

Y.J. Yoon1, S. Cho2, J.H. Seo1, E.S. Cho3, S.W. Kang1, J.H. Bae1, J.H. Lee1, B.G Park4, J.S. Harris2, I.M. Kang1 (1.Kyungpook National Univ., 2.Stanford Univ., 3.Gachon Univ., 4.Seoul National Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-19