[PS-6-19] Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application

Y.J. Yoon¹、S. Cho²、J.H. Seo¹、E.S. Cho³、S.W. Kang¹、J.H. Bae¹、J.H. Lee¹、B.G Park⁴、J.S. Harris²、I.M. Kang¹ (1.Kyungpook National Univ.、2.Stanford Univ.、3.Gachon Univ.、4.Seoul National Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-19